Suscripción a Biblioteca: Guest
Portal Digitalde Biblioteca Digital eLibros Revistas Referencias y Libros de Ponencias Colecciones
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2018025450
pages 299-307

MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS BY PHOSPHORUS DIFFUSION

Dmitrii V. Andreev
N.E. Bauman Moscow State Technical University, Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia
Gennady G. Bondarenko
National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
Vladimir V. Andreev
N.E. Bauman Moscow State Technical University, Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia
Vladimir M. Maslowsky
Zelenograd Research Institute of Physical Problems, 5 Georgievskiy Ave., Zelenograd, 124460, Russia
Alexander A. Stolyarov
N.E. Bauman Moscow State Technical University, Kaluga Branch, 2 Bazhenov Str., Kaluga, 248000, Russia

SINOPSIS

We investigate the diffusion of phosphorus in thermal SiO2 films of MIS structure and influence of the process on charge effects in gate dielectric and at interfaces in Fowler–Nordheim high-field tunnel injection of electrons. One rates the cross sections of electron traps in a phosphosilicate glass (PSG) film. We show that the density of electron traps increases with increasing the PSG film thickness. The ability of using a negative charge has been established. It is accumulated in the PSG film of MIS structures with double-layer SiO2–PSG gate dielectric during high-field tunnel injection of electrons, to modify MIS devices. It is shown that the use of a double-layer SiO2–PSG gate dielectric with concentration of phosphorus in PSG film of 0.4–0.9% allows one to increase the average amount of charge injected into a dielectric until breakdown and decrease the amount of defective structures with a low amount of charge injected into the dielectric before breakdown.


Articles with similar content:

MOLECULAR DYNAMICS SIMULATION OF INTERDEFFUSION IN METAL/METAL SYSTEMS AT LOW ENERGY DEPOSITION IN VACUUM
Progress in Plasma Processing of Materials, 1999, Vol.1, 1999, issue
P.T. Salo, O.S. Trushin, K. Kokko
VACUUM ARC DEPOSITED NANOSTRUCTURED Ti COATINGS
Progress in Plasma Processing of Materials, 2001, Vol.0, 2001, issue
N .F. Vershinin, B. B. Straumal, R. Dimitriou , W. Gust, E. Rabkin, R. Kroeger
ON THE OXIDATION OF Ni-23Co-17Cr-12AI-0.5Y-ALLOY SERVING AS BOND COAT IN THERMAL BARRIER COATINGS
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.4, 2000, issue 3
Reidar Haugsrud, Erick Lugscheider, Ingard Kvernes
PLASMA STIMULATED GROWTH OF THIN FILMS
Progress in Plasma Processing of Materials, 1999, Vol.1, 1999, issue
E.G. Hasanov, V.F. Bockarev, O.S. Trushin, V.V. Naumov, A.A. Goryachev
OPTICAL EMISSION SPECTROSCOPY OF A SUPERSONIC LOW-PRESSURE PLASMA REACTOR USED TO SYNTHESIS SOFC CATHODES THIN LAYERS
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.10, 2006, issue 3
Jacques Amouroux, M. Nickravech, Daniel Morvan, F. Rousseau, S. Awamat