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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publicado 4 números por año

ISSN Imprimir: 1093-3611

ISSN En Línea: 1940-4360

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INFLUENCE OF RAPID THERMAL TREATMENT OF INITIAL SILICON WAFERS ON THE ELECTROPHYSICAL PROPERTIES OF SILICON DIOXIDE OBTAINED BY PYROGENOUS OXIDATION

Volumen 23, Edición 3, 2019, pp. 283-290
DOI: 10.1615/HighTempMatProc.2019031122
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SINOPSIS

For investigation of the influence exerted by rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by means of the pyrogenous oxidation the analysis methods of volt-farad characteristics and the scanning probe electrometry were used. The obtained results demonstrate reduction of both stress of the flat zones and the charge density on the silicon-silicon dioxide boundary on the wafers, which were subjected to rapid thermal treatment. The alterations of the surface potential on the wafer area registered by means of the method of scanning probe electrometry correspond to the diminishing operation of the electrons, leaving the surface and serve as justification of the assertion that the properties of the silicon-silicon dioxide boundary improve after rapid thermal treatment of initial silicon wafers owing to the substantial enhancement of the homogeneity of microstructure of the surface layer of silicon dioxide.

REFERENCIAS
  1. Aleksandrov, O.V. and Dus', A.I., A Model of Formation of Fixed Charge in Thermal Silicon Dioxide, Semiconductors, vol. 45, no. 4, pp. 467-473, 2011.

  2. Belous, A.I., Efimenko, S.A., and Turtsevich, A., Semiconductor Power Electronics, Moscow: Tekhnosfera, 2013.

  3. Belous, A.I., Solodukha, V.A., and Shvedov, S.V., Space Electronics, Book 1, Moscow: Tekhnosfera, 2015.

  4. Bobrova, E.A. and Omeljanovskaya, N.M., Features of the Capacitance-Voltage Characteristics in a MOS Structure Due to the Oxide Charge, Semiconductors., vol. 42, no. 11, pp. 1351-1354, 2008.

  5. Efimenko, S., Belous, A. and Solodukha, V., Element Base of Power Electronics, Saarbrucken, Germany: Lap Lambert Academic Publishing, 2015.

  6. Kharchenko, V.A., Reliability Problems of Electronic Components, Bull. High. Educ. Institutions. Mater. Electron. Eng., vol. 18, no. 1, pp. 52-57, 2015.

  7. Krasnikov, G.Y., Design-Technological Peculiarities of the Submicron MOS-Transistors, Part 1, Moscow: Tekhnosfera, 2002.

  8. Nalivayko, O.Y., Basic Technological Processes for Fabrication of the Semiconductor Devices and Integrated Circuits on Silicon, A.S. Turtsevich, Ed., vol. 2, Minsk: Integralpoligraf, 2013.

  9. Pilipenko, V.A., Rapid Thermal Treatments in VLSI Technology, Minsk, Belarus: Publishing Center of Belarusian State University, 2004.

  10. Pilipenko, V.A., Saladukha, V.A., Filipenya, V.A., Vorobey, R.I., Gusev, O.K., Zharin, A.L., Pantsialeyeu, K.V., Svistun, A.I., Tyavlovsky, A.K., and Tyavlovsky, K.L., Characterization of the Electrophysical Properties of Silicon-Silicon Dioxide Interface using Probe Electrometry Methods, Devices Meth. Meas., vol. 8, no. 4, pp. 344-356, 2017.

  11. Popo, R.A., Operational Reliability of Microelectronic Equipment, Part 1, Tutorial of MIRE, Moscow, 2005.

  12. Vorobey, R.I., Gusev, O.K., Zharin, A.L., Petlitsky, A.N., Pilipenko, V.A., Turtsevitch, A.S., Tyavlovsky, A.K., and Tyavlovsky, K.L., Study of Silicon-Insulator Structure Defects Based on Analysis of a Spatial Distribution of a Semiconductor Wafers' Surface Potential, Devices Meth. Meas., vol. 7, no. 2, pp. 67-72, 2013.

CITADO POR
  1. Pantsialeyeu Kanstantsin, Zharin Anatoly, Gusev Oleg, Vorobey Roman, Tyavlovsky Andrey, Tyavlovsky Konstantin, Svistun Aliaksandr, DIGITAL CONTACT POTENTIAL PROBE IN STUDYING THE DEFORMATION OF DIELECTRIC MATERIALS, Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska, 10, 4, 2020. Crossref

  2. Pantsialeyeu K. U., Mikitsevich U. A., Svistun A. I., Vorobey R. I., Gusev O. K., Zharin A. L., Charge-Sensitive Technique for Deformation Processes’ Study, Devices and Methods of Measurements, 13, 4, 2022. Crossref

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