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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publicado 4 números por año

ISSN Imprimir: 1093-3611

ISSN En Línea: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

Indexed in

HYDROGENATION AND PURIFICATION OF SILICON BY RF PLASMA

Volumen 9, Edición 3, 2005, pp. 375-390
DOI: 10.1615/HighTempMatProc.v9.i3.50
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SINOPSIS

The photovoltaic properties of polycrystalline silicon depend on the crystallinity and the purity of the material. The hydrogenation of silicon leads to a passivation of crystalline defects and active impurities. In this paper, we demonstrate that the chemical properties of the plasma can be controlled in order to purify and introduce hydrogen in silicon in order to produce a material with photovoltaic properties even if the density of dislocations is high. The comparison of two plasma processes shows that the hydrogenation of the silicon in liquid state produces strong bonds between hydrogen and silicon atoms. This is due to the excited state of hydrogen (n=8) generated at a temperature close to 11000 K in the inductive coil area of the RF plasma. Experimental measurements of the plasma properties (electronic density, electronic temperature) are in agreement with the calculations resulting from the modeling.

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