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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v13.i3-4.120
pages 399-412

MODELING PECVD GROWTH OF NANOSTRUCTURED CARBON MATERIALS

Erik Neyts
University of Antwerp, Department of Chemistry, PLASMANT Research Group, Universiteitsplein 1, 2610 Antwerp, Belgium
Annemie Bogaerts
University of Antwerp, Department of Chemistry, PLASMANT Research Group, Universiteitsplein 1, 2610 Antwerp, Belgium
M.C.M. van de Sanden
Eindhoven University of Technology, Department of Applied Physics, Den Dolech 2, 5600 MB Eindhoven, The Netherlands

SINOPSIS

We present here some of our modeling efforts for PECVD growth of nanostructured carbon materials with focus on amorphous hydrogenated carbon. Experimental data from an expanding thermal plasma setup were used as input for the simulations. Attention was focused both on the film growth mechanism, as well as on the hydrocarbon reaction mechanisms during growth of the films. It is found that the reaction mechanisms and sticking coefficients are dependent on the specific surface sites, and the structural properties of the growth radicals. The film growth results are in correspondence with the experiment. Furthermore, it is found that thin a-C:H films can be densified using an additional H-flux towards the substrate.


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