Suscripción a Biblioteca: Guest
Portal Digitalde Biblioteca Digital eLibros Revistas Referencias y Libros de Ponencias Colecciones
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v9.i2.80
pages 263-267

SYNTHESIS AND PROPERTIES OF FULLERENE CONTAINED FILMS IN RF PLASMA

V. V. Azharonok
Institute of Physics of NAS of Belarus,68 Independence Av., 220072 Minsk
L. I. Filatova
Institute of Molecular and Atomic Physics of the National Academy of Sciences of Belarus, F.Skaryna Av., 70, Minsk, 220072, Belarus
V. D. Shimanovich
Institute of Molecular and Atomic Physics of NAS of Belarus, 70 Skaryna Av., 220072 Minsk, Belarus

SINOPSIS

The process of deposition of semitransparent fullerene contained composite films in a capacitively coupled rf discharge is investigated. The 5.28 MHz discharge is operated in a parallel plate reactor. As a working gas helium is used at pressure 0.5 ÷ 5 Torr. Carbon films are deposited on a quartz plate. Products of electric arc synthesis of fullerenes (a small-dispersed carbon soot containing fullerene C60 and C70) are used as an initial substance for making carbon films. The processes in the discharge are studied by emission spectroscopy methods. The gas kinetic temperature is measured in different zones of the discharge gap near the quartz substrate. Optical absorption properties and structure of obtained films are investigated using UV-VIS spectrophotometer and scanning electron microscope.


Articles with similar content:

AN INFLUENCE OF PLASMA TREATMENT ON STRUCTURE PROPERTIES OF THIN SiC FILMS ON Si
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.14, 2010, issue 1-2
K. Kh. Nussupov, N. B. Beisenkhanov, Z. M. Amreyeva, Daniya M. Mukhamedshina, Z. B. Omarova, K. A. Mit'
PROCESSES OF DEPOSITION OF AMORPHOUS METAL/CARBON FILMS OF VARIOUS ELEMENTAL COMPOSITIONS
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.20, 2016, issue 1
N. T. Kvasov, Valiantsin V. Astashynski, M. V. Astashynskaya, Vladimir V. Uglov
SPECTROSCOPIC AND PROBE DIAGNOSTICS OF CARBON PLASMA FLOWS OF A PULSE VACUUM ARC
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.14, 2010, issue 1-2
S.V. Goncharik, V. V. Azharonok, L. E. Krat'ko, N. M. Chekan, N. I. Chubrik, I. P. Smyaglikov
AMORPHOUS SILICON THIN FILMS FOR SOLAR CELLS FROM PLASMA PROCESSES
Progress in Plasma Processing of Materials, 1999, Vol.1, 1999, issue
U. Carmi, R. Avni, A. lnspektor
SPATIAL DISTRIBUTION OF OPTICAL EMISSION IN SiH4/H2 RF DISCHARGES
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.3, 1999, issue 2-3
Spyros Stamou, Dimitris Mataras, E. Amanatides