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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v7.i2.130
10 pages

MICROWAVE PECVD SYSTEM FOR SiNx:H ANTIREFLECTION COATINGS AND HYDROGEN PASSIVATION ON MULTICRYSTALLINE SILICON

E. Fourmond
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France
M. Lemiti
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France
C. Trassy
UPR 9033 CNRS - EPM, ENSHMG BP 95 - 38402 Saint-Martin-d'Heres - France
A. Laugier
Laboratoire de Physique de la Matiere, UMR 5511, 7 av. J. Capelle, INSA, 69621 Villeurbanne cedex, France

SINOPSIS

Silicon nitride layers (SiNx:H) are widely used in the photovoltaics field as antireflection coating and to passivate multicrystalline silicon solar cells. With this aim, we have developed a plasma-assisted chemical vapour deposition reactor using microwave remote plasma (2.45 GHz). Effect of gas flow rate, microwave power and substrate temperature on the layers is presented. Refractive index varies between 1.7 to 3 in the sample as grown, with a deposition rate up to 40 nm/min. The temperature was observe to have no influence on the deposition rate, and the optical properties of the layers are very stable towards rapid thermal annealing at high temperature (850°C). This is attributed to the low hydrogen content of the layers, as revealed by FTIR analysis.


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