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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
ESCI SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimir: 1093-3611
ISSN En Línea: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v11.i4.60
pages 537-548

COMPREHENSIVE MODIFICATION OF SEMICONDUCTORS AND METALS PROVIDING NEW STRUCTURAL FEATURES OF SURFACE LAYERS SUBJECTED TO COMPRESSION PLASMA FLOWS

V. M. Astashinski
Institute of Mathematics, National Academy of Sciences of Belarus, Minsk, Belarus
Siarhei I. Ananin
A. V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15 P. Brovka Str., Minsk, 220072, Belarus
E. A. Kostyukevich
A. V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15, P. Brovki Str, Minsk 220072, Belarus
A. M. Kuzmitski
A. V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus, 15, P. Brovki Str, Minsk 220072, Belarus
Vladimir V. Uglov
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; National Research Tomsk Polytechnic University, 2a Lenin Ave., Tomsk, 634028, Russia
V. M. Anishchik
Belarussian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
Nikolai N. Cherenda
Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus; South-Urals State University, 76 Lenin Ave., Chelyabinsk, 454080, Russia
A. K. Stalmashonak
Belarusian State University, 4, F.Nezavisimosti ave., 220030 Minsk, Belarus
Yu. V. Sveshnikov
Belarusian State University, 4, F. Nezalezhnastsi ave., Minsk, 220080 Belarus
N. T. Kvasov
Research Laboratory, Department of Solid State Physics, Belarusian State University, 4 Nezavisimost Ave., Minsk, 220030, Belarus
A. L. Danilyuk
Belarusian State University of Informatics and Radioelectronics, 6, P. Brovka Street, 220027 Minsk, Belarus
A. V. Punko
Belarusian State University of Informatics and Radioelectronics, 6, P. Brovki Str., Minsk, 220027 Belarus

SINOPSIS

The priority results obtained with the use of compression plasma flows for substantial structural-phase modification of semiconductor and metal surfaces are presented. In particular, the formation of bulk (cylinder-like) regular submicron/ nanoscale structures on the silicon wafers, deposition of nanostructured metal coatings completely covering a surface including bulk structures, plasma-assisted mixing in the systems "coating-substrate" from various materials, and a deep doping of modified layer by atoms of the plasma-forming gas are reported.


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