%0 Journal Article %A Lukin, K. A. %A Maksymov, P. P. %D 2013 %I Begell House %K mm and submm semiconductor oscillators, impact ionization, abrupt p-n-junctions, frequency, power, electronic efficiency %N 8 %P 731-740 %R 10.1615/TelecomRadEng.v72.i8.70 %T POWER CHARACTERISTICS OF MILLIMETRIC AND SUBMILLIMETRIC OSCILLATORS BASED ON THE ABRUPT p-n-JUNCTTONS %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,46516d1c09baadcd,1036ba5049d0b414.html %V 72 %X Numerical simulation of power characteristics of microwaves oscillators on the basis of abrupt Ge, Si and GaAs p-n-junctions with the permanent reversed bias is performed. It is shown that excitation of oscillators is conditioned by interdependence of the electric field and avalanche current, which is observed at an avalanche current comparable to the value with of the limit current of p-n-junction. Power, frequency and electronic efficiency of oscillators is explored and comparison is executed with characteristics of IMPATT-diodes. It is shown that power and electronic efficiency of oscillators is substantially higher than at IMPATT-diodes %8 2013-04-15