RT Journal Article
ID 1036ba5049d0b414
A1 Lukin, K. A.
A1 Maksymov, P. P.
T1 POWER CHARACTERISTICS OF MILLIMETRIC AND SUBMILLIMETRIC OSCILLATORS BASED ON THE ABRUPT <i>p-n</i>-JUNCTTONS 
JF Telecommunications and Radio Engineering
JO TRE
YR 2013
FD 2013-04-15
VO 72
IS 8
SP 731
OP 740
K1 mm and submm semiconductor oscillators
K1 impact ionization
K1 abrupt <i>p-n</i>-junctions
K1 frequency
K1 power
K1 electronic efficiency
AB Numerical simulation of power characteristics of microwaves oscillators on the basis of abrupt Ge, Si and GaAs <i>p-n</i>-junctions with the permanent reversed bias is performed. It is shown that excitation of oscillators is conditioned by interdependence of the electric field and avalanche current, which is observed at an avalanche current comparable to the value with of the limit current of <i>p-n</i>-junction. Power, frequency and electronic efficiency of oscillators is explored and comparison is executed with characteristics of IMPATT-diodes. It is shown that power and electronic efficiency of oscillators is substantially higher than at IMPATT-diodes
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,46516d1c09baadcd,1036ba5049d0b414.html