RT Journal Article ID 1c6e5abc607d3496 A1 Astashinski, V. M. A1 Ananin, Siarhei I. A1 Kostyukevich, E. A. A1 Kuzmitski, Anton M. A1 Uglov, Vladimir V. A1 Anishchik, V. M. A1 Cherenda, Nikolai N. A1 Stalmashonak, A. K. A1 Sveshnikov, Yu. V. A1 Kvasov, N. T. A1 Danilyuk, A. L. A1 Punko, A. V. T1 COMPREHENSIVE MODIFICATION OF SEMICONDUCTORS AND METALS PROVIDING NEW STRUCTURAL FEATURES OF SURFACE LAYERS SUBJECTED TO COMPRESSION PLASMA FLOWS JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes JO HTM YR 2007 FD 2007-12-13 VO 11 IS 4 SP 537 OP 548 AB The priority results obtained with the use of compression plasma flows for substantial structural-phase modification of semiconductor and metal surfaces are presented. In particular, the formation of bulk (cylinder-like) regular submicron/ nanoscale structures on the silicon wafers, deposition of nanostructured metal coatings completely covering a surface including bulk structures, plasma-assisted mixing in the systems "coating-substrate" from various materials, and a deep doping of modified layer by atoms of the plasma-forming gas are reported. PB Begell House LK https://www.dl.begellhouse.com/journals/57d172397126f956,772795cf2e75f332,1c6e5abc607d3496.html