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DOI: 10.1615/ICHMT.2009.CONV.730
8 pages

M. M. Shemirani
Ryerson University, Dept of Mechanical and Industrial Engineering, 350 Victoria St., Toronto, ON, M5B 2K3 Canada

M. Ziad Saghir
Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria St., Toronto, ON M5B2K3, Canada

D. Labrie
Dalhousie University, Dept of Physics, Halifax, Nova Scotia

H. Sheibani
ALHOSN University, Faculty of Engineering, Abdu Dhabi, UAE


The effects of the applied axial static magnetic field on the flow, heat and mass transfer in the solvent region of the bulk single crystal growth of SiGe has been investigated. The silicon distribution and deposition at the solidification front studied. The results of steady state condition along with different magnetic field intensities were analyzed. It was found that the applied axial magnetic field had no significant impact on the silicon distribution.

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