Publication de 12 numéros par an
ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009
Indexed in
Field Emission Properties of Nonstoichiometric Silicon Oxides
RÉSUMÉ
The emission characteristics of SiOx (x∼0.3) thin film flat cathodes, produced by thermal vacuum evaporation of silicon, have been investigated. It is shown that the high-temperature annealing (≥ 1000°C) of these films in the inert ambient gas with subsequent etching in the HF solution sufficiently improves emission properties: emission currents increase whereas the threshold voltage reduces. The explanation of the peculiarities of electron field emission from SiOx is proposed. It is demonstrated that the Fowler-Nordheim tunneling is a limitation process of the current flow under high-electric fields. Current peaks in the emission volt-ampere characteristics are revealed. Most likely, they are caused by the resonance tunneling mechanism.