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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v67.i9.60
pages 823-831

Methods for Calculation of Inductances in the Input Matching Circuit of a Powerful HF (UHF) LDMOS Transistor

O. M. Bulgakov
Voronezh Institute of the Russian Ministry of Internal Affairs, Voronezh, Russia Voronezh State University, Voronezh, Russia
B. K. Petrov
Voronezh Institute of the Russian Ministry of Internal Affairs, Voronezh, Russia Voronezh State University, Voronezh, Russia

RÉSUMÉ

By an example of a transistor BLF861 we presented simple and original methods for calculation of equivalent inductances of a powerful HF (UHF) LDMOS transistor; these methods allow for specific features of internal connections of powerful semiconductor devices of this type.


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