Abonnement à la biblothèque: Guest
Portail numérique Bibliothèque numérique eBooks Revues Références et comptes rendus Collections
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

Volumes:
Volume 78, 2019 Volume 77, 2018 Volume 76, 2017 Volume 75, 2016 Volume 74, 2015 Volume 73, 2014 Volume 72, 2013 Volume 71, 2012 Volume 70, 2011 Volume 69, 2010 Volume 68, 2009 Volume 67, 2008 Volume 66, 2007 Volume 65, 2006 Volume 64, 2005 Volume 63, 2005 Volume 62, 2004 Volume 61, 2004 Volume 60, 2003 Volume 59, 2003 Volume 58, 2002 Volume 57, 2002 Volume 56, 2001 Volume 55, 2001 Volume 54, 2000 Volume 53, 1999 Volume 52, 1998 Volume 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v77.i1.90
pages 83-94

BASIC COMPONENTS OF TRANSMITTING AND RECEIVING PARTS OF A MICROWAVE ORBITAL POWER CHANNEL

A. B. Gnilenko
Institute of Transport Systems and Technology National Academy of Sciences of Ukraine 5 Pisarzhevskogo St., Dnipro, 490056, Ukraine
S. V. Plaksin
Institute of Transport Systems and Technology National Academy of Sciences of Ukraine 5 Pisarzhevskogo St., Dnipro, 490056, Ukraine
L. M. Pogorelaya
Institute of Transport Systems and Technology National Academy of Sciences of Ukraine 5 Pisarzhevskogo St., Dnipro, 490056, Ukraine

RÉSUMÉ

The paper is aimed to the improvement of the characteristics of the energy transmission channel main components designed for transmission onto the earth's surface of the energy produced by photovoltaic conversion on the orbital platform and then converted into microwave radiation. The computer simulation on the base of the diffusion-drift model has shown that the choice of silicon, as a semiconductor material, for the lower cascade of a GaInP/GaAs/Si-type solar cell with a larger band-gap than that of germanium in the GaInP/GaAs/Ge type structure and, therefore, with a higher open-circuit voltage, results in an approximately 20% increase of the total solar cell efficiency. The results of computer simulation of a multi-junction n+–p–p+ structure with vertical p–n junctions at a silicon wafer thickness of 150 μm for each n+–p–p+ structure and a carrier lifetime of 20 microseconds show that the efficiency and short circuit current density are equal 11.9% and 25.8 mA/cm2, respectively. The base element of the radiating antenna array, optimized for the frequency corresponding to the second atmosphere transparency window, is modeled using the CST Microwave Studio software package: it is shown that the angular width of the directional diagram of such a radiator at a level of 3 dB is 38.9 degrees, and the efficiency reaches a maximum of 93.2% near the 95 GHz frequency. The applicability of the absolute negative resistance mode in multivalley semiconductors (of the n-GaAs type) for converting microwave radiation into direct current has been analytically investigated and experimentally tested. It is established that such a device is able to convert microwave radiation near the 500 kW power level (in case of installation of semiconductor structure in a reduced-section waveguide – 90 × 22.5 mm2 for a frequency of 2.45 GHz).


Articles with similar content:

MILLIMETER WAVE PATCH ANTENNA ARRAY FOR MAGLEV WIRELESS SMART GRID TECHNOLOGY
Telecommunications and Radio Engineering, Vol.77, 2018, issue 2
A. B. Gnilenko, S. V. Plaksin
RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS
Telecommunications and Radio Engineering, Vol.70, 2011, issue 14
E. N. Zhivotova, I. P. Storozhenko
HIGH FREQUENCY OHMIC LOSSES IN TERAHERTZ FREQUENCY RANGE CW KLYNOTRONS
Telecommunications and Radio Engineering, Vol.76, 2017, issue 10
Yu. S. Kovshov, A. N. Kuleshov, E. M. Khutoryan, A. A. Likhachev, S. A. Vlasenko, S. S. Ponomarenko, S. A. Kishko, V. V. Zavertanniy
Effect of Generation and Recombination of Excitons on Static Characteristics of Injection Lasers
Telecommunications and Radio Engineering, Vol.51, 1997, issue 8
A. G. Pashchenko
DEFECTED GROUND APPROACH TO REDUCE BACK RADIATIONS IN MAGNETO-ELECTRIC DIPOLE ANTENNA
Telecommunications and Radio Engineering, Vol.78, 2019, issue 4
V. N. Tiwari, Neetu