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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v77.i2.70
pages 161-171

KINETICS OF PHOTOCONDUCTIVITY OF c-Si WITH AMORPHOUS INHOMOGENEITIES

O. Yu. Babychenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine
A. G. Pashchenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine

RÉSUMÉ

The influence of amorphous inclusions of a cylindrical shape on the photoconductivity of crystalline silicon under the action of radiation from the photosensitivity region of the structure under study was theoretically investigated. The photoconductivity of the structure is analyzed depending on the geometric dimensions of the inclusions, their location in the structure, and the rate of surface recombination of nonequilibrium charge carriers. It is established that when the fraction of inclusions in the structure increases, the processes of generation of nonequilibrium charge carriers are determined mainly by an amorphous matrix. The appearance of the effect of negative photoconductivity under certain conditions has been revealed.


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