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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i15.60
pages 1377-1384

INFLUENCE OF STRUCTURAL AND ELECTROPHYSICAL PARAMETERS OF RESONANT TUNNELING DIODE ACTIVE REGION ON ITS CURRENT-VOLTAGE CHARACTERISTICS

M.M Ibadullin
Kharkiv National University of Radio Electronics, 14, Nauka Avenue, Kharkiv, 61166, Ukraine
A. G. Pashchenko
Kharkiv National University of Radio Engineering and Electronics, 14 Nauka Ave, Kharkiv, 61166, Ukraine

RÉSUMÉ

Miniaturization of the solid electronics components is gradually coming to its natural boundary. A promising way of solving this problem consists in development of the element base, components of which would operating due to the quantum − size effects.


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