Abonnement à la biblothèque: Guest
Portail numérique Bibliothèque numérique eBooks Revues Références et comptes rendus Collections
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

Volumes:
Volume 78, 2019 Volume 77, 2018 Volume 76, 2017 Volume 75, 2016 Volume 74, 2015 Volume 73, 2014 Volume 72, 2013 Volume 71, 2012 Volume 70, 2011 Volume 69, 2010 Volume 68, 2009 Volume 67, 2008 Volume 66, 2007 Volume 65, 2006 Volume 64, 2005 Volume 63, 2005 Volume 62, 2004 Volume 61, 2004 Volume 60, 2003 Volume 59, 2003 Volume 58, 2002 Volume 57, 2002 Volume 56, 2001 Volume 55, 2001 Volume 54, 2000 Volume 53, 1999 Volume 52, 1998 Volume 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v76.i1.50
pages 61-71

IMPACT IONIZATION IN SHORT AlZGa1-ZN-BASED DIODES

O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
K. H. Pryhodko
V.N. Karazin Kharkiv National University, 4, Svobody Sq., Kharkiv, 61022, Ukraine
V. A. Zozulia
V.N. Karazin Kharkiv National University, 4, Svobody Sq., Kharkiv, 61022, Ukraine

RÉSUMÉ

The development of millimeter and terahertz wave ranges is one of the main objectives of the current radio physics. However, there are not many active nonlinear elements that can operate in those ranges. Impact ionization in wide-gap nitride-based semiconductors is a high-speed process and can be used in active elements operating at these ranges. This paper deals with the charge transport in short diodes (with active length of less than 0.3μ) based on AlzGa1-zN compounds. Here the purpose is to determine the onset conditions of impact ionization, the peculiarities, and its influence on devices characteristics. It was shown the possibility of creating the localized high field region the magnitude of which is enough for obtaining impact ionization. This also allows operating impact ionization by changing the AlzGa1-zN composition distribution in the diode. The outcome of the study is the determination of properties of impact ionization that can be used for further analysis of physical processes in the proposed structures and their manufacturing.


Articles with similar content:

InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts
Telecommunications and Radio Engineering, Vol.66, 2007, issue 19
I. P. Storozhenko
Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1−x(z) with the Intervalley Electron Transport
Telecommunications and Radio Engineering, Vol.67, 2008, issue 10
I. P. Storozhenko
STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS
Telecommunications and Radio Engineering, Vol.75, 2016, issue 12
I. P. Storozhenko
COHERENT POWER COMBINING IN AVALANCHE-OSCILLATOR DIODES
Telecommunications and Radio Engineering, Vol.72, 2013, issue 16
P. P. Maksymov, K. A. Lukin
Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone
Telecommunications and Radio Engineering, Vol.61, 2004, issue 7-12
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko