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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v73.i8.60
pages 719-733

GALLIUM NITRIDE DIODE WITH TUNNEL INJECTION

N. M. Goncharuk
Orion Research Institute, 8a, E. Potier St., Kyiv, 03057, Ukraine
N. F. Karushkin
State-owned Enterprise Scientific Research Institute "Orion", 8a Eu. Pottier St., Kyiv 03680, Ukraine
V. V. Malyshko
Orion Research Institute, 8a, E. Potier St., Kyiv, 03057, Ukraine
V. A. Orehovskiy
Orion Research Institute, 8a, E. Potier St., Kyiv, 03057, Ukraine

RÉSUMÉ

Actual problem of modern micro- and nanoelectronics is advancing into submillimeter frequency range up to terahertz one. Transit-time effects of charge carrier transfer is the main obstacle to increase operating frequency of available microwave diodes. The least transit response time and low noise level are typical of tunneling process In this work for the first time the diode on the base of single-barrier nanostructure with non-resonance electron tunneling and subsequent drift in transit layer has been investigated. The research was conducted in the framework of impedance small-signal model with considering delay time of electron injection, which is comparable with electron transit time of the diode. Dependences of diode microwave impedance in frequency range of its negative conductance on transit angle, diode diameter and parasitic resistance were investigated at different barrier layer parameters, which correspond to electron injection delay time from tenths up to more than one picosecond. It is shown, that the greatest negative conductance is reached at optimal values of transit angle and diode diameter at frequency close to the quarter of inverse time of injection. It exceeds considerably the frequency for resonance-tunneling diode with comparable noise characteristics. This fact demonstrates the diode potential in microelectronics. The research can serve as a basis for making new type of sub-millimeter wave range diode, which manufacture is considerably simpler than the same for resonance-tunneling one.


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