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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v59.i1012.170
5 pages

An Influence of Heat Processes on the Drift Characteristics of Semiconductor Structures

S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. Yu. Tereshchenko
Tavricheskii National University, 4, Vernadskogo Ave., Simferopol, 95007, Ukraine
V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
A. A. Shadrin
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

RÉSUMÉ

The given work presents the calculated results of drift characteristics of GaAs and Si-based semiconductor structures. The results are obtained in the processes of heating a crystal by the current of free-charge carriers. It is shown that under the high current conditions the drifting velocity growth depends on heating of a semiconductor structure.


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