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Telecommunications and Radio Engineering
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ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v61.i10.80
pages 894-902

Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone

Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine


Gunn diodes based on the different variband semiconductor alloys (Inx(z)Ga1−x(z)As, Alx(z)Ga1−x(z)As, InP1−x(z)Asx(z)) compositions of which depend linearly on the coordinate in the active zone have been studied in a wide frequency range with the help of a two-temperature model of intervalley electron transfer in a variband semiconductor. Critical generation frequencies, energy and frequency characteristics have been determined. The list of A3B5 threefold semiconductor alloys, which are promising for the use in the Gunn diodes, have been suggested.

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