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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v61.i10.80
pages 894-902

Energy and Frequency Characteristics of the Gann Diodes Based On A3B5 Threefold Semiconductors with Linearly Changing Composition in the Active Zone

Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

RÉSUMÉ

Gunn diodes based on the different variband semiconductor alloys (Inx(z)Ga1−x(z)As, Alx(z)Ga1−x(z)As, InP1−x(z)Asx(z)) compositions of which depend linearly on the coordinate in the active zone have been studied in a wide frequency range with the help of a two-temperature model of intervalley electron transfer in a variband semiconductor. Critical generation frequencies, energy and frequency characteristics have been determined. The list of A3B5 threefold semiconductor alloys, which are promising for the use in the Gunn diodes, have been suggested.


Articles with similar content:

InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts
Telecommunications and Radio Engineering, Vol.66, 2007, issue 19
I. P. Storozhenko
Modelling the Gunn Diodes Based on Variband Semiconductors
Telecommunications and Radio Engineering, Vol.59, 2003, issue 1&2
I. P. Storozhenko
Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaPx(z)As1−x(z) with the Intervalley Electron Transport
Telecommunications and Radio Engineering, Vol.67, 2008, issue 10
I. P. Storozhenko
RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS
Telecommunications and Radio Engineering, Vol.70, 2011, issue 14
E. N. Zhivotova, I. P. Storozhenko
Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes
Telecommunications and Radio Engineering, Vol.67, 2008, issue 8
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko