Abonnement à la biblothèque: Guest
Portail numérique Bibliothèque numérique eBooks Revues Références et comptes rendus Collections
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

Volumes:
Volume 78, 2019 Volume 77, 2018 Volume 76, 2017 Volume 75, 2016 Volume 74, 2015 Volume 73, 2014 Volume 72, 2013 Volume 71, 2012 Volume 70, 2011 Volume 69, 2010 Volume 68, 2009 Volume 67, 2008 Volume 66, 2007 Volume 65, 2006 Volume 64, 2005 Volume 63, 2005 Volume 62, 2004 Volume 61, 2004 Volume 60, 2003 Volume 59, 2003 Volume 58, 2002 Volume 57, 2002 Volume 56, 2001 Volume 55, 2001 Volume 54, 2000 Volume 53, 1999 Volume 52, 1998 Volume 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v78.i11.90
pages 1027-1032

THE INFLUENCE OF γ-IRRADIATION ON ELECTRICAL PROPERTIES OF CdIn2Te4 CRYSTALS

O.G. Grushka
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
V.T. Maslyuk
Institute of Electron Physics of Ukrainian National Academy of Science, 88016 Uzhgorod, Ukraine
S.M. Chupyra
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
O.M. Myslyuk
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
O. M. Slyotov
Institute of Physical-Technical and Computer Science, Yu. Fedkovych Chernivtsi National University, 2 Kotsyubinsky Str., 58012 Chernivtsi, Ukraine

RÉSUMÉ

The influence of γ-irradiation on the basic electrical parameters of CdIn2Te4 crystals in the temperature range of 240-410 K has been investigated. It was established that the noticeable changes in the parameters of the irradiated samples take place under irradiation doses D > 1·108 Roentgen. It was shown that under dose D = 1.2·108 Roentgen and additional dose D = 4·108 Roentgen the parameters change slightly at high temperature T > 350 K and at T < 350 K the changes of parameters increase with rising γ-irradiation dose. The anomalous increase of the Hall mobility in the irradiated samples was found and the explanation of the obtained effect nature was proposed. It was shown that the main cause of the changes of the electrical parameters under the influence of γ-irradiation is the Fermi-level displacement within the energy gap of CdIn2Te4 crystals.

RÉFÉRENCES

  1. Lebedev, A.A., Ivanov, and Strokan, N.B., (2004) Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films, Semiconductors, 38(2), pp. 125-147.

  2. Brudnyi, V.N., Grinyaev, S.N., and Kolin, N.G., (2003) Electronic properties of irradiated semiconductors. A model of the Fermi level pinning, Semiconductors 37(5), pp. 537-545.

  3. Lebedev, A.A., Davydovskaya, K.S., Yakimenko, A.N., Strel'chuk, A.M., and Kozlovskii, V.V., (2017) A study of the effect of electron and proton irradiation on 4H-SiC device structures, Technical Physics Letters, 43(11), pp. 1027-1029.

  4. Gaidar, G.P., (2014) On the kinetics of electron processes in <sup>60</sup>Co &#947;-irradiated n-Ge single crystals, Semiconductors, 48(9), pp. 1141-1144.

  5. Gal'chinetskii, L.P., Koshkin, V.M., Kumakov, V.M. et al., (1972) The effect of radiation resistance of semiconductors with stoichiometric vacancies, Sov. Phys. Solid State, 14(2), pp. 646-648, (in Russian).

  6. Koshkin, V.M., Dmitriev, Yu.N., Zabrodskii, Yu.R. et al., (1984) Anomalous radiation resistance of loose crystalline structures, Sov. Phys. Semicond, 18(8), pp. 1373-1378, (in Russian).

  7. Gorley, P.M., Grushka, O.G., Vorobets', O.I., and Grushka, Z.M., (2006) Temperature Dependence of the Concentration of Carriers in CdIn<sub>2</sub>Te<sub>4</sub> Crystals, Ukr. J. Phys., 51(5), pp. 475-477, (in Russian).

  8. Grushka, O.G., Chupyra, S.M., Bilichuk, S.V., and Parfenyuk, O.A., (2018) Electronic Processes in CdIn<sub>2</sub>Te<sub>4</sub> Crystals, Semiconductors, 52(8), pp. 973-976.

  9. Shalimova, K.V., (1985) Physics of Semiconductors, Moscow, Russia: Energoatomizdat, 392 p., (in Russian).

  10. Koshkin, V.M. and Dmitriev, Y.N., (1994) Chemistry and Physics of Compounds with Loose Crystal Structure. Harwood academic publishers, Switzerland, Chemistry Review, 19(2), 138 p., (in Russian).


Articles with similar content:

Energy interchange channels analysis and parameters of RF plasma torch calculations
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.11, 2007, issue 2
Jacques Amouroux, S. Nguen-Kuok
Study of Hg1−xCrxSe Solid Solutions with Chromium Compositions 0.01 ≤ x ≤ 0.1
Telecommunications and Radio Engineering, Vol.61, 2004, issue 7-12
N. A. Popenko, L. D. Paranchich, V. R. Romanyuk, S. Yu. Paranchich, I. V. Ivanchenko, S. Yu. Karelin
AUSTENITIC STEEL SURFACE ALLOYED WITH ZIRCONIUM USING COMPRESSION PLASMA FLOW
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.16, 2012, issue 4
Valiantsin M. Astashynski, Nikolai N. Cherenda, E. A. Kostyukevich, A. M. Kuzmitski, A. H. Sari, Vladimir V. Uglov, Yu. A. Petukhou
DEFECT FORMATION MECHANISMS OF ZINC SELENIDE LAYERS DOPED BY ISOVALENT IMPURITIES OF THE II GROUP
Telecommunications and Radio Engineering, Vol.78, 2019, issue 8
M. M. Berezovskiy, O. V. Kinzerska, Victor P. Makhniy
γ-IRRADIATION INFLUENCE ON THE URBACH RULE CRITERIA IN ZnSe<Te> CRYSTALS
Telecommunications and Radio Engineering, Vol.78, 2019, issue 2
I. M. Senko, O. V. Kinzerska, Victor P. Makhniy