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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i5.70
pages 465-471

Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity

L. I. Arkhilyuk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
M. M. Sletov
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
V. V. Gorley
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine
I. V. Tkachenko
Chernivtsi Institute of Trade and Economics, 7 Tsentralna Ploshcha, 58002 Chernivtsi, Ukraine

RÉSUMÉ

Concentration of equilibrium point defects for ZnSe crystals doped with oxygen to the concentration of 1019cm−3 at T=1150K was calculated within framework of the quasi-chemical reaction approach. Calculation results confirm electron conductivity of the samples. Selenium vacancies and interstitial zinc are proved to be the dominating impurities responsible for the formation of red and blue photoluminescence bands, experimentally observed for ZnSe: O samples.


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