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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i15.50
pages 1381-1385


Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
V. V. Melnyk
Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, Chernivtsi, 58012, Ukraine
V. D. Ryzhikov
STC for Radiation Instruments of STC "Institute for Single Crystals", Kharkov; Institute for Scintillation Materials of NAS of Ukraine, Kharkiv; NSC "Institute of Metrology", Kharkiv, Ukraine State Customs Service of Ukraine, Kyiv, Ukraine
S.N. Galkin
Institute for scintillation materials NAS of Ukraine, 60 Lenin Ave, Kharkiv, 61001, Ukraine
G. M. Onishchenko
Institute for Scientillation Materials, Science Technology Center "Institute for Single Crystals", National Academy of Science of Ukraine, Kharkiv; V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine


The authors consider the relation between the forward bias effect at the integral and spectral characteristics of photocurrent of heterojunction SnO2−ZnSe. It was revealed that the internal gain factor within the spectral range of 200−520 nanometer at the voltage of 1.5 V varies in the range of 103−104, and the monochrome current sensitivity reaches about 100 A/W.


  1. Anisimova, I.D., Vikulin, I.M., Zaitov, F.A., and Kurmashev, Sh.D., Semiconductor photoreceivers: ultraviolet, visible and near-field infrared spectrum ranges.

  2. Blank, T.V. and Goldberg, Yu.A., Semiconductor photo-sensitive converters for ultraviolet spectral range.

  3. Makhniy, V.P. and Melnik, V.V., Photovoltaic properties of Ni–ZnSe contacts.

  4. Rozenfeld, A.B., Ryzhikov, V.D., Onyshenko, G.M., Galkin, S.M. at al., Small-size UV radiometer on the basis of Schottky diodes.

  5. Ryzhikov, V.D., Scintillation crystals of semiconductor junctions &#1040;<sup>II</sup> &#1042;<sup>VI</sup>. Technology, properties, application.

  6. Makhniy, V.P., Physical processes in diode structures based on wide-band-gap semiconductors &#1040;<sup>2</sup>&#1042;<sup>6</sup>.

  7. Batavin, V.V., Kontsevoy, Yu.A., and Fedorovich, Yu.V., Measuring of parameters of semiconductor materials and structures.

  8. Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts.

  9. Lampert, M.A. and Mark, P., Current Injection in Solids.