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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i15.50
pages 1381-1385

UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
V. V. Melnyk
Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, Chernivtsi, 58012, Ukraine
V. D. Ryzhikov
STC for Radiation Instruments of STC "Institute for Single Crystals", Kharkov; Institute for Scintillation Materials of NAS of Ukraine, Kharkiv; NSC "Institute of Metrology", Kharkiv, Ukraine State Customs Service of Ukraine, Kyiv, Ukraine
S.N. Galkin
Institute for scintillation materials NAS of Ukraine, 60 Lenin Ave, Kharkiv, 61001, Ukraine
G. M. Onishchenko
Institute for Scientillation Materials, Science Technology Center "Institute for Single Crystals", National Academy of Science of Ukraine, Kharkiv; V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

RÉSUMÉ

The authors consider the relation between the forward bias effect at the integral and spectral characteristics of photocurrent of heterojunction SnO2−ZnSe. It was revealed that the internal gain factor within the spectral range of 200−520 nanometer at the voltage of 1.5 V varies in the range of 103−104, and the monochrome current sensitivity reaches about 100 A/W.

RÉFÉRENCES

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