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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i15.30
pages 1361-1370

THE INFLUENCE OF BIAS CURRENT UPON THE FREQUENCY CHARACTERISTICS AND STABILITY OF METAL-SCHOTTKY GATE FIELD-EFFECT TRANSISTORS (MS-GFET)

E. E. Asanov
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
G. V. Kilessa
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
Mykola I. Slipchenko
Kharkiv National University of Radio Electronics, 14, Nauky Avenue, Kharkiv, 61166, Ukraine

RÉSUMÉ

The influence of bias current upon the frequency characteristics and stability of MS-GFETs has been analyzed using the numerical simulation procedures. It is shown that, as the frequency of an effective voltage radio pulse increases, the bias current tends to grow and the conduction current decreases. As a result, the heating rate of the MS-GFET active region falls off, and there occurs the threshold voltage buildup, thereby leading to a breakdown onset.

RÉFÉRENCES

  1. Wunsch, D.C. and Bell, R.R., Determination of threshold failure of semiconductor diodes and transistors due to pulse voltage.

  2. Zuyev, S.A., Starostenko, V.V., and Unzhakov, D.A., The influence of bias current upon the frequency and stability of MS-GFETs.

  3. Zuyev, S.A., Shadrin, A.A., and Starostenko, V.V., A model for calculating the GaAs micron-sized field-effect transistors.

  4. Zuyev, S.A., Taran, Ye.P., Shadrin, A.A., Starostenko, V.V., Churyumov, G.I., and Tereshchenko, V.Yu., Investigations into thermal conditions of the MS-GFET operation under the effect of the large-amplitude short voltage pulse.

  5. Obolensky, S.V. and Kitayev, M.A., Field-effect transistor with a 30-nm gate.

  6. Gribsky, M.P., Zuyev, S.A., Slipchenko, N.I., and Unzhakov, D.A., The influence of the gate width upon MS-GFET volt-ampere characteristics and electro-thermal stability.


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