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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v55.i10-11.210
8 pages

Influence of Capacitance of p+nn+ and n+pp+ Diodes on the Absorption of 54-78GHz Waveband Radiation

N. A. Shekhovtsov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine


The absorption of the radiation lying in the range between 54 and 78 GHz in germanium p+nn+ and n+pp+ diodes with weakly doped n and p regions can, with the increase of injection current, either decrease, or at first increase and then decrease, or a strong increase of the absorption gives way to a weak increase. It is shown that, in the last two cases, the change of the behavior of the injection current dependence of the radiation absorption is condition by the change of the diode capacitance sign from positive to negative.

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