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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v64.i10.60
pages 841-850

Experimental Investigation of Interaction between Electron Beams and Semiconductor Plasma

O. A. Zamuraev
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura Str., Kharkiv 61085, Ukraine
I. V. Lopatin
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
A. F. Rusanov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine

RÉSUMÉ

The results of the experiments related to the interaction between non-relativistic electron beams and semiconductor structures excited by electromagnetic oscillations of the millimeter wave band in the temperature range from +30 to −196°C are represented in the paper. The features of the research technique and the experimental setting have been considered. The SHF-signals, received at the excitation frequency 70 GHz and the nitric temperature of semiconductor samples (InSb), are interpreted as a result of interaction between an electron beam and surface waves in semiconductor plasma.


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