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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v67.i8.70
pages 739-749

Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine
Yu. V. Arkusha
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

RÉSUMÉ

Operation of the GaAs Gunn diodes with AlxGa1−xAs and cathodes is studied with the two-level model of the intervalley electron transport in the semiconductors. The key features and regularities of operation of the intervalley-electron-transport devices in which an isotype forward-biased heterojunction is a cathode are defined. Energy and frequency characteristics are obtained. Limit of the operation frequencies are determined.


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