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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v73.i13.60
pages 1201-1207

RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED−GAP SEMICONDUCTORS

I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine

RÉSUMÉ

A domain drift and current oscillations have been studied in devices based on the graded-gap semiconductors. It is shown that the use of graded-gap semiconductors can increase the operating frequency band of the Gunn diodes. A survey of properties of A3B5 semiconductors of the kind is presented.


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