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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v69.i5.60
pages 429-440

MODEL MICROWAVE MIXERS BASED ON ABRUPT p−n JUNCTIONS

P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

RÉSUMÉ

Computer-assisted simulations are described of microwave mixers implemented on the basis of Ge-, Si- and GaAs p−n junctions. The mathematical model involves equations of the drift-diffusion model of semiconductor devices. The drift-diffusion model equations are solved using the modified counter-sweep method. The operation principle of the mixer is analyzed. The physical nature of signal distortions has been identified. The amplification factor, as well as the gain characteristic and frequency response have been calculated. Frequency spectra and phases of the output signals of the Ge-, Si- and GaAs-based p−n junctions are presented.


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