Abonnement à la biblothèque: Guest
Portail numérique Bibliothèque numérique eBooks Revues Références et comptes rendus Collections
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimer: 0040-2508
ISSN En ligne: 1943-6009

Volume 78, 2019 Volume 77, 2018 Volume 76, 2017 Volume 75, 2016 Volume 74, 2015 Volume 73, 2014 Volume 72, 2013 Volume 71, 2012 Volume 70, 2011 Volume 69, 2010 Volume 68, 2009 Volume 67, 2008 Volume 66, 2007 Volume 65, 2006 Volume 64, 2005 Volume 63, 2005 Volume 62, 2004 Volume 61, 2004 Volume 60, 2003 Volume 59, 2003 Volume 58, 2002 Volume 57, 2002 Volume 56, 2001 Volume 55, 2001 Volume 54, 2000 Volume 53, 1999 Volume 52, 1998 Volume 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i12.60
pages 1101-1111


I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine


The usage of the varyband semiconductors in uniformly doped devices with intervalley electron transfer effect can result in the formation of a static electric domain. Keen interest in the static domain is due to the possibility of creating local electric field strength sufficient for zone-zone impact ionization. Diodes with avalanche ionization in the static domain can be used as active elements of noise generators. The paper analyzes the process of the static domain formation and avalanche current in it on the basis of a two-temperature model of varyband AlGaAs. It is shown that for a static domain formation at room temperature, two conditions are required. First, the minimum value of the energy gap between the Γ-valley and the closest to it in side valley by energy should be smaller than the thermal energy of the electrons. Secondly, the rate of change of the energy gap with coordinate must be greater than 150 eV·m-1. Accordingly, in the devices based on Al0.36Ga0.64As–GaAs cathode static domain is formed, and in the devices on the basis of GaAs-Al0.36Ga0.64As anode domain is formed. Varyband semiconductor compounds in which the static domain may form has been determined. The usage of graded-gap Al0.36Ga0.64As–GaAs compound with low doping level near the cathode increases the effective and integral current-multiplication factors as compared to GaAs-diode. The findings expand the knowledge of the physical processes of carrier transport in complex semiconductor structures. They can be used for technological development of new high-speed devices, such as transistors, diodes, Gunn diodes with a static domain, avalanche transit-time diodes, frequency multipliers.

Articles with similar content:

Telecommunications and Radio Engineering, Vol.76, 2017, issue 1
V. A. Zozulia, K. H. Pryhodko, O. V. Botsula
Energy and Frequency Characteristics of GaAs Gunn Diodes with AlxGa1−xAs and GaPxAs1−x Cathodes
Telecommunications and Radio Engineering, Vol.67, 2008, issue 8
Yu. V. Arkusha, E. D. Prokhorov, I. P. Storozhenko
Telecommunications and Radio Engineering, Vol.73, 2014, issue 10
M. V. Kaydash
InP1-x(z)Asx(z) Variband Gunn Diodes with Different Cathode Contacts
Telecommunications and Radio Engineering, Vol.66, 2007, issue 19
I. P. Storozhenko
Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes
Telecommunications and Radio Engineering, Vol.60, 2003, issue 5&6
E. D. Prokhorov, O. V. Botsula