Nanoscience and Technology: An International Journal
Publication de 4 numéros par an
ISSN Imprimer: 2572-4258
ISSN En ligne: 2572-4266
IF:
1.3
5-Year IF:
1.7
Immediacy Index:
0.7
Eigenfactor:
0.00023
JCI:
0.11
SJR:
0.244
SNIP:
0.521
CiteScore™::
3.6
H-Index:
14
Indexed in
Volume 12, 2021 Numéro 1
DOI: 10.1615/NanoSciTechnolIntJ.v12.i1
ACCOUNTING STRAIN INCOMPATIBILITY IN THE NANOSTRUCTURAL MODEL OF SHAPE MEMORY ALLOY MECHANICAL BEHAVIOR
pp. 1-18
DOI: 10.1615/NanoSciTechnolIntJ.2020036063
EFFECT OF AGGREGATION MORPHOLOGY ON THERMAL CONDUCTIVITY AND VISCOSITY OF Al2O3-CO2 NANOFLUID: A MOLECULAR DYNAMICS APPROACH
pp. 19-37
DOI: 10.1615/NanoSciTechnolIntJ.2020033951
MARANGONI CONVECTION FLOW OF CNTs-Al2O3-WATER HYBRID NANOFLUIDS WITH VARIABLE FLUID PROPERTIES
pp. 39-56
DOI: 10.1615/NanoSciTechnolIntJ.2020033931
MODELING CHARGE TRANSPORT IN B40 FULLERENE MOLECULAR JUNCTION WITH DIFFERENT ELECTRODE ORIENTATIONS FOR NANOSCALE APPLICATIONS
pp. 57-74
DOI: 10.1615/NanoSciTechnolIntJ.2021031789
SYMMETRY AND APPLIED VARIATIONAL MODELS FOR STRAIN GRADIENT ANISOTROPIC ELASTICITY
pp. 75-99
DOI: 10.1615/NanoSciTechnolIntJ.2021037073
Prochains articles
Numerical investigation on multistage bifurcated Rectangular Microchannel with asymmetrical heatflux using Nanofluid
Effects of rotational modulation on convection in ethylene glycol based hybrid nanofluids with internal heating
Preparation and Thermoelectric Properties of Bi2Te(3-x)Sex Samples by High Energy Ball Milling and Spark Plasma Sintering Method
Statistical analysis of Sisko Nanofluid with Hall and Ion Slip Effect over Porous Medium
Preparation and Characterization of Nano-Cellulose Powder from Oil Palm Empty Fruit Bunch as Green Nanofluids
Influence of Hybrid Nanofluids and Source Configuration on Natural Convection in square cavity
The Preparation of Nanoparticle Films Based on Light Welding Technology
FIRST-PRINCIPLES CALCULATION OF STRUCTURAL, ELECTRONIC, AND OPTICAL PROPERTIES OF INP1-XSBX USING WC-mBJ FOR NANOSCALE IR APPLICATIONS
On organization of drainage of radiation defects from working area of an integrated circuit