Nanoscience and Technology: An International Journal
Publication de 4 numéros par an
ISSN Imprimer: 2572-4258
ISSN En ligne: 2572-4266
IF:
1.3
5-Year IF:
1.7
Immediacy Index:
0.7
Eigenfactor:
0.00023
JCI:
0.11
SJR:
0.244
SNIP:
0.521
CiteScore™::
3.6
H-Index:
14
Indexed in
Volume 10, 2019 Numéro 2
DOI: 10.1615/NanoSciTechnolIntJ.v10.i2
GEOMETRIC ASPECTS OF THE THEORY OF INCOMPATIBLE DEFORMATIONS. PART II. STRAIN AND STRESS MEASURES
pp. 97-121
DOI: 10.1615/NanoSciTechnolIntJ.2018024573
THEORETICAL INVESTIGATION OF TEMPERATURE-GRADIENT INDUCED GLASS CUTTING
pp. 123-131
DOI: 10.1615/NanoSciTechnolIntJ.2019030139
NANOTECHNOLOGY-BASED STRATEGIES FOR NUTRACEUTICALS: A REVIEW OF CURRENT RESEARCH DEVELOPMENT
pp. 133-155
DOI: 10.1615/NanoSciTechnolIntJ.2019030098
FABRICATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL INFILTRATED POLYURETHANE FOAMS FOR ENERGY ABSORPTION APPLICATIONS
pp. 157-168
DOI: 10.1615/NanoSciTechnolIntJ.2019031314
NUMERICAL INVESTIGATION OF HEAT TRANSFER OF MHD NANOFLUID OVER A VERTICAL CONE DUE TO VISCOUS-OHMIC DISSIPATION AND SLIP BOUNDARY CONDITIONS
pp. 169-193
DOI: 10.1615/NanoSciTechnolIntJ.2019030004
Prochains articles
Numerical investigation on multistage bifurcated Rectangular Microchannel with asymmetrical heatflux using Nanofluid
Effects of rotational modulation on convection in ethylene glycol based hybrid nanofluids with internal heating
Preparation and Thermoelectric Properties of Bi2Te(3-x)Sex Samples by High Energy Ball Milling and Spark Plasma Sintering Method
Statistical analysis of Sisko Nanofluid with Hall and Ion Slip Effect over Porous Medium
Preparation and Characterization of Nano-Cellulose Powder from Oil Palm Empty Fruit Bunch as Green Nanofluids
Influence of Hybrid Nanofluids and Source Configuration on Natural Convection in square cavity
The Preparation of Nanoparticle Films Based on Light Welding Technology
FIRST-PRINCIPLES CALCULATION OF STRUCTURAL, ELECTRONIC, AND OPTICAL PROPERTIES OF INP1-XSBX USING WC-mBJ FOR NANOSCALE IR APPLICATIONS
On organization of drainage of radiation defects from working area of an integrated circuit