Nanoscience and Technology: An International Journal
Publication de 4 numéros par an
ISSN Imprimer: 2572-4258
ISSN En ligne: 2572-4266
IF:
1.3
5-Year IF:
1.7
Immediacy Index:
0.7
Eigenfactor:
0.00023
JCI:
0.11
SJR:
0.244
SNIP:
0.521
CiteScore™::
3.6
H-Index:
14
Indexed in
Volume 2, 2011 Numéro 4
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i4
MIXED CONVECTION IN A LID-DRIVEN SQUARE CAVITY FILLED WITH NANOFLUIDS
pp. 275-294
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i4.10
SURFACE EFFECTS ON NONLOCAL CRITICAL BUCKLING TEMPERATURE OF NANOTUBES
pp. 295-308
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i4.20
MULTILEVEL SIMULATION OF THE PROCESSES OF NANOAEROSOL FORMATION.PART 3. NUMERICAL INVESTIGATION OF NANOAEROSOLS FOR FEEDING PLANTS FROM THE GAS PHASE
pp. 309-322
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i4.30
MECHANISMS UNDERLYING THE INTERACTION OF CARBON NANOTUBES WITH EPOXY BINDERS. QUANTUM-MECHANICAL INVESTIGATIONS
pp. 323-345
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i4.40
MODELING OF LAYER BEHAVIOR NEAR THE SURFACE OF A DISPERSED FILLER IN AN ELASTOMER COMPOSITE UNDER DEFORMATION
pp. 347-355
DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i4.50
Prochains articles
Numerical investigation on multistage bifurcated Rectangular Microchannel with asymmetrical heatflux using Nanofluid
Effects of rotational modulation on convection in ethylene glycol based hybrid nanofluids with internal heating
Preparation and Thermoelectric Properties of Bi2Te(3-x)Sex Samples by High Energy Ball Milling and Spark Plasma Sintering Method
Statistical analysis of Sisko Nanofluid with Hall and Ion Slip Effect over Porous Medium
Preparation and Characterization of Nano-Cellulose Powder from Oil Palm Empty Fruit Bunch as Green Nanofluids
Influence of Hybrid Nanofluids and Source Configuration on Natural Convection in square cavity
The Preparation of Nanoparticle Films Based on Light Welding Technology
FIRST-PRINCIPLES CALCULATION OF STRUCTURAL, ELECTRONIC, AND OPTICAL PROPERTIES OF INP1-XSBX USING WC-mBJ FOR NANOSCALE IR APPLICATIONS
On organization of drainage of radiation defects from working area of an integrated circuit