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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.19 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v10.i4.90
pages 583-590

LIBS ANALYSIS OF PHOTOVOLTAIC MATERIAL INCLUDING WAFER AND RAW MATERIAL

A. Soric
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
N. Leone
Section détection physique, Centre d'Etudes du Bouchet, Delegation Generate pour l'Armement, BP 3, 91710 Vert le Petit, France
P. Adam
Section détection physique, Centre d’Etudes du Bouchet, Direction des Centres d'Expertise et d'Essais, Delegation Generate pour l’Armement, BP 3, 91710 Vert le Petit, France

RÉSUMÉ

Laser Induced Breakdown Spectroscopy is a new analytical method permitting in less than 10.10−6 second to qualify by atomic emission spectroscopy the composition of every kind of material without any sampling. The high sensibility of the technique (10−7g/g) gives the possibility to qualify the purity of the material, its defects or any kind of pollutant from the crucible or impurity from the raw material. We have developed this technique for three kinds of silicon materials; firstly metallurgical grade silicon, the raw material, secondly this previous silicon after its purification by an RF plasma process, at last the photovoltaic grade silicon to evaluate the efficiency of the plasma process purification. First analysis of photovoltaic and metallurgical grade silicon (raw material) gives references of two degrees of silicon purity. After the plasma treatment we analyze the surface and the bulk of the treated sample to understand diffusion mechanisms of impurities in the liquid material during the plasma treatment.


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