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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publication de 4  numéros par an

ISSN Imprimer: 1093-3611

ISSN En ligne: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CARBON FILMS ON DIFFERENT SUBSTRATES

Volume 10, Numéro 3, 2006, pp. 457-466
DOI: 10.1615/HighTempMatProc.v10.i3.90
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RÉSUMÉ

Polymer and diamond like carbon thin films were deposited at temperature below 250°C by high frequency (40−60 MHz) plasma enhanced chemical vapor deposition. The films have been successfully deposited on metal (Ti, Cu, Mo, Ta, Ni, Pt), silicon, germanium, ceramic, quarts and glass flat substrates as well as on 3-D objects: metal balls, washer, tips, cones. Electron field emission, optical and electrical properties, mechanical and tribological behavior of the films were studied in comparison with their structure, phase and chemical composition. Plasma pre-treatment of the substrate, ion bombardment and etching of growing film surface were found to be the key factors of the film deposition process.

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