Abonnement à la biblothèque: Guest
Portail numérique Bibliothèque numérique eBooks Revues Références et comptes rendus Collections
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.176 SNIP: 0.48 CiteScore™: 1.3

ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2019031122
pages 283-290

INFLUENCE OF RAPID THERMAL TREATMENT OF INITIAL SILICON WAFERS ON THE ELECTROPHYSICAL PROPERTIES OF SILICON DIOXIDE OBTAINED BY PYROGENOUS OXIDATION

Vladimir A. Pilipenko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vitaly A. Solodukha
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Anatoly Zharin
Belarussian National Technical University, Minsk, Republic of Belarus
Oleg Gusev
Belarussian National Technical University, Minsk, Republic of Belarus
Roman Vorobey
Belarussian National Technical University, Minsk, Republic of Belarus
Kanstantsin Pantsialeyeu
Belarussian National Technical University, Minsk, Republic of Belarus
Andrei Tyavlovsky
Belarussian National Technical University, Minsk, Republic of Belarus
Konstantin Tyavlovsky
Belarussian National Technical University, Minsk, Republic of Belarus
Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin, 20–618, Poland

RÉSUMÉ

For investigation of the influence exerted by rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by means of the pyrogenous oxidation the analysis methods of volt-farad characteristics and the scanning probe electrometry were used. The obtained results demonstrate reduction of both stress of the flat zones and the charge density on the silicon-silicon dioxide boundary on the wafers, which were subjected to rapid thermal treatment. The alterations of the surface potential on the wafer area registered by means of the method of scanning probe electrometry correspond to the diminishing operation of the electrons, leaving the surface and serve as justification of the assertion that the properties of the silicon-silicon dioxide boundary improve after rapid thermal treatment of initial silicon wafers owing to the substantial enhancement of the homogeneity of microstructure of the surface layer of silicon dioxide.

RÉFÉRENCES

  1. Aleksandrov, O.V. and Dus', A.I., A Model of Formation of Fixed Charge in Thermal Silicon Dioxide, Semiconductors, vol. 45, no. 4, pp. 467-473, 2011.

  2. Belous, A.I., Efimenko, S.A., and Turtsevich, A., Semiconductor Power Electronics, Moscow: Tekhnosfera, 2013.

  3. Belous, A.I., Solodukha, V.A., and Shvedov, S.V., Space Electronics, Book 1, Moscow: Tekhnosfera, 2015.

  4. Bobrova, E.A. and Omeljanovskaya, N.M., Features of the Capacitance-Voltage Characteristics in a MOS Structure Due to the Oxide Charge, Semiconductors., vol. 42, no. 11, pp. 1351-1354, 2008.

  5. Efimenko, S., Belous, A. and Solodukha, V., Element Base of Power Electronics, Saarbrucken, Germany: Lap Lambert Academic Publishing, 2015.

  6. Kharchenko, V.A., Reliability Problems of Electronic Components, Bull. High. Educ. Institutions. Mater. Electron. Eng., vol. 18, no. 1, pp. 52-57, 2015.

  7. Krasnikov, G.Y., Design-Technological Peculiarities of the Submicron MOS-Transistors, Part 1, Moscow: Tekhnosfera, 2002.

  8. Nalivayko, O.Y., Basic Technological Processes for Fabrication of the Semiconductor Devices and Integrated Circuits on Silicon, A.S. Turtsevich, Ed., vol. 2, Minsk: Integralpoligraf, 2013.

  9. Pilipenko, V.A., Rapid Thermal Treatments in VLSI Technology, Minsk, Belarus: Publishing Center of Belarusian State University, 2004.

  10. Pilipenko, V.A., Saladukha, V.A., Filipenya, V.A., Vorobey, R.I., Gusev, O.K., Zharin, A.L., Pantsialeyeu, K.V., Svistun, A.I., Tyavlovsky, A.K., and Tyavlovsky, K.L., Characterization of the Electrophysical Properties of Silicon-Silicon Dioxide Interface using Probe Electrometry Methods, Devices Meth. Meas., vol. 8, no. 4, pp. 344-356, 2017.

  11. Popo, R.A., Operational Reliability of Microelectronic Equipment, Part 1, Tutorial of MIRE, Moscow, 2005.

  12. Vorobey, R.I., Gusev, O.K., Zharin, A.L., Petlitsky, A.N., Pilipenko, V.A., Turtsevitch, A.S., Tyavlovsky, A.K., and Tyavlovsky, K.L., Study of Silicon-Insulator Structure Defects Based on Analysis of a Spatial Distribution of a Semiconductor Wafers' Surface Potential, Devices Meth. Meas., vol. 7, no. 2, pp. 67-72, 2013.


Articles with similar content:

PULSED PLASMA FLOW INTERACTION WITH A STEEL SURFACE
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.19, 2015, issue 2
Anuar Zhukeshov, B. M. Ibraev, A. U. Amrenova, B. Useinov, Z. Moldabekov, A. T. Gabdullina, Sh. G. Giniyatova
CHARACTERISTIC FEATURES OF HEATING SEMICONDUCTOR SILICON STRUCTURES DURING RAPID THERMAL TREATMENT IN THE VLSI TECHNOLOGY
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.22, 2018, issue 1
Valentina A. Gorushko, Vitaly A. Solodukha, Vitalii A. Bondariev, Vladimir A. Pilipenko
METAL SURFACE MODIFICATION BY A NANOSECOND DIFFUSE DISCHARGE IN NITROGEN
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.19, 2015, issue 1
Victor Tarasenko, M. Erofeev, M. Shulepov
INFLUENCE OF THE ANODIZING TEMPERATURE ON THE MECHANICAL PROPERTIES OF HIGHLY POROUS ANODIC ALUMINA OBTAINED USING HIGH-VOLTAGE ELECTROCHEMICAL OXIDATION
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.21, 2017, issue 1
Daniel Nmadu, A. A. Parshuto
NITRIDATION OF AUSTENITIC STAINLESS STEEL IN A NITROGEN PLASMA
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, Vol.7, 2003, issue 3
C. Templier, J.-P. Riviere, L. L. Pranevicius, D. Milcius, G. Abrasonis, Liudas Pranevicius, J. Nomgaudyte