Publication de 4 numéros par an
ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360
Indexed in
LIGHT-EMITTING N-RICH SILICON NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED AND LOW-PRESSURE CVD
RÉSUMÉ
N-rich silicon nitride films were deposited on Si wafers by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques and, subsequently, annealed at 600°C. In spite of the same thickness and similar stoichiometric composition, the PECVD and LPCVD silicon nitride films differ in their light-emitting properties. The photoluminescence (PL) maxima lie in the red region and in the blue region for PECVD and LPCVD SiN1.5 films, respectively. The PL is most intensive for films deposited by PECVD. The characteristic features of the photoluminescence spectra of two sets of N-rich films are explained taking into account the contribution from the band tail states and defects in the silicon nitride matrix.