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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v6.i1.60
12 pages

THIN FILMS OF SILICON COMPOUNDS DEPOSITED BY PE-CVD AT ATMOSPHERIC PRESSURE

Krzysztof Schmidt-Szalowski
Warsaw University of Technology, Faculty of Chemistry, ul. Noakowskiego 3, 00-662 Warszawa, Poland
Z. Rzanek-Boroch
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland
J. Sentek
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland
Z. Rymuza
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland
Z. Kusznierewicz
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland
M. Misiak
Warsaw University of Technology PI. Politechniki 1 / 00-664 Warszawa Poland

RÉSUMÉ

A new PE-CVD process for the thin coating manufacturing, using electric discharges at atmospheric pressure stabilized with a dielectric barrier (DBD), has been developed on a laboratory scale. Studying the polycondensation of hexamethyldisilazane (HMDSN) and tetraethoxysilicon (TEOS) uniform films, of a thickness of 10 - 200 nm, were obtained with silicon oxynitride or dioxide as the main components and with residues of organic components. The films were stable, smooth and strong adhering to the substrate. Their composition under various experimental conditions was determined by means of FT-IR and XPS spectroscopy, and their mechanical properties were studied. Laboratory models of reactors for thin films deposition under DBD conditions at atmospheric pressure were described.


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