Publication de 4 numéros par an
ISSN Imprimer: 1093-3611
ISSN En ligne: 1940-4360
Indexed in
THIN FILMS OF SILICON COMPOUNDS DEPOSITED BY PE-CVD AT ATMOSPHERIC PRESSURE
RÉSUMÉ
A new PE-CVD process for the thin coating manufacturing, using electric discharges at atmospheric pressure stabilized with a dielectric barrier (DBD), has been developed on a laboratory scale. Studying the polycondensation of hexamethyldisilazane (HMDSN) and tetraethoxysilicon (TEOS) uniform films, of a thickness of 10 - 200 nm, were obtained with silicon oxynitride or dioxide as the main components and with residues of organic components. The films were stable, smooth and strong adhering to the substrate. Their composition under various experimental conditions was determined by means of FT-IR and XPS spectroscopy, and their mechanical properties were studied. Laboratory models of reactors for thin films deposition under DBD conditions at atmospheric pressure were described.
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