RT Journal Article ID 273fd3ec2c07c6be A1 Makhniy, Victor P. A1 Melnyk, V. V. A1 Ryzhikov, V. D. A1 Galkin, S.N. A1 Onishchenko, G. M. T1 UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN JF Telecommunications and Radio Engineering JO TRE YR 2012 FD 2012-09-28 VO 71 IS 15 SP 1381 OP 1385 K1 optoelectronics K1 sensor K1 forward bias K1 volt-ampere characteristics AB The authors consider the relation between the forward bias effect at the integral and spectral characteristics of photocurrent of heterojunction SnO2−ZnSe. It was revealed that the internal gain factor within the spectral range of 200−520 nanometer at the voltage of 1.5 V varies in the range of 103−104, and the monochrome current sensitivity reaches about 100 A/W. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,4ebb594449ebf363,273fd3ec2c07c6be.html