RT Journal Article
ID 273fd3ec2c07c6be
A1 Makhniy, Victor P.
A1 Melnyk, V. V.
A1 Ryzhikov, V. D.
A1 Galkin, S.N.
A1 Onishchenko, G. M.
T1 UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN
JF Telecommunications and Radio Engineering
JO TRE
YR 2012
FD 2012-09-28
VO 71
IS 15
SP 1381
OP 1385
K1 optoelectronics
K1 sensor
K1 forward bias
K1 volt-ampere characteristics
AB The authors consider the relation between the forward bias effect at the integral and spectral characteristics of photocurrent of heterojunction SnO2−ZnSe. It was revealed that the internal gain factor within the spectral range of 200−520 nanometer at the voltage of 1.5 V varies in the range of 103−104, and the monochrome current sensitivity reaches about 100 A/W.
PB Begell House
LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,4ebb594449ebf363,273fd3ec2c07c6be.html