%0 Journal Article
%A Storozhenko, I. P.
%D 2014
%I Begell House
%K Gunn diode, graded-gap semiconductor, nitride semiconductor,
intervalley electron transfer, resonance frequency
%N 13
%P 1201-1207
%R 10.1615/TelecomRadEng.v73.i13.60
%T RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED−GAP SEMICONDUCTORS
%U https://www.dl.begellhouse.com/journals/0632a9d54950b268,6b541fef7dc47de0,4574d37b4231fbe2.html
%V 73
%X A domain drift and current oscillations have been studied in devices based on the graded-gap semiconductors. It is shown that the use of graded-gap semiconductors can increase the
operating frequency band of the Gunn diodes. A survey of properties of A3B5 semiconductors of the kind is presented.
%8 2014-08-07