%0 Journal Article %A Arkhilyuk, L. I. %A Makhniy, Victor P. %A Sletov, M. M. %A Gorley, V. V. %A Tkachenko, I. V. %D 2007 %I Begell House %N 5 %P 465-471 %R 10.1615/TelecomRadEng.v66.i5.70 %T Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,3fbc9bd70d4c8494,6f4e2a7e5b31e86c.html %V 66 %X Concentration of equilibrium point defects for ZnSe crystals doped with oxygen to the concentration of 1019cm−3 at T=1150K was calculated within framework of the quasi-chemical reaction approach. Calculation results confirm electron conductivity of the samples. Selenium vacancies and interstitial zinc are proved to be the dominating impurities responsible for the formation of red and blue photoluminescence bands, experimentally observed for ZnSe: O samples. %8 2007-07-12