%0 Journal Article %A Mrozovskaya, Elizaveta V. %A Zimin, Petr A. %A Chubunov, Pavel A. %A Zebrev, Gennady I. %A Maslovsky, Vladimir M. %D 2019 %I Begell House %K RadFET, ELDRS, radiation effects in devices, total dose effects, dose rate effects, dosimeter, simultaneous annealing %N 4 %P 313-318 %R 10.1615/HighTempMatProc.2019031964 %T SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs %U https://www.dl.begellhouse.com/journals/57d172397126f956,3b44d7b209668af9,7b4bf26a3291bc37.html %V 23 %X The manifestation of simultaneous annealing in p-MNOS (metal-nitride-oxide-semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data. %8 2020-01-24