Begell House
Telecommunications and Radio Engineering
Telecommunications and Radio Engineering
0040-2508
58
7-8
2002
Interrelations between One- and Two-Parameter Representations of Random Signals of Finite Energy
An interrelation is established between one- and two-parameter orthogonal representations of random signals of finite energy, which is used to relate one- and two-parameter representations of signal realizations and correlation functions of the representation components. The mathematical formalism of Hilbert spaces of random processes over the Hilbert space of realizations is used for the purpose, as well as the methods of random process energy theory. Energy characteristics of one- and two-parameter representations of random signals in arbitrary orthonormal bases are analyzed and the interrelation between these characteristics is obtained.
A. A.
Mogyla
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine
K. A.
Lukin
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine
11
Stochastic Instability of the High-Frequency Eigen Waves in Ferrite
It is shown that the ferrite's high-frequency eigen waves are excited in the case of low-frequency random modifications of ferrite parameters. The excitation takes place as a result of development of stochastic parametrical instability. The considered mechanism of excitation of these high-frequency waves is rather general and has opened up a new way to transform energy of low-frequency oscillations to energy of high-frequency waves. In addition, the considered mechanism allows one to transform energy of noise oscillations to energy of a coherent radiation.
Vyacheslav Aleksandrovich
Buts
Kharkov Physical Engineering Institute, Ukraine
V. A.
Chatskaya
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
6
The Use of Atomic Functions for Solving Boundary Value Problems of Mathematical Physics
The use of a new tool of mathematical analysis, so-called atomic functions, for solving boundary value problems for elliptic type partial differential equations arising in different areas of mathematical physics is considered; attention is given to spatial problems in complex-shaped domains; new methods based on atomic functions which allow us to obtain THE approximate solutions with a high order of accuracy, and small time and memory expenditures, are proposed.
Victor Filippovich
Kravchenko
Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Vladimir Alexeevich
Rvachev
Kharkov Aviation Institute, Kharkov, Ukraine
31
The Electrodynamics Criterion for Smoothness
Incidence of E — (H —) waves and a randomly polarized wave on the aperture of a V-shaped and trapezoidal grove is considered. Based on the skin-effect theory the electrodynamics criterion dependent upon the geometrical parameters of unevenness and electric properties of a material is obtained. The results gained by calculating the integrated hemispherical reflection factor are corroborated by experimental data on a molybdenum surface having a different degree of roughness and being heated to a definite temperature.
R.V.
Vorobyov
Kharkov Aerospace Institute
S.V.
Butakova
Kharkov Aerospace Institute
10
The Probe Diameter Choosing for the Investigation of the Field Distribution in the Small Aperture Open resonator
The scatter probe diameters which provide the graphical coincidence of the calculated and measured field distributions have been chosen experimentally for various values of the loaded Q-factor of a resonance system 300 Ql Ql has been obtained with the approximation method using its an example.
5
Parametric Amplification of Signals in the Short-Wave Part of MM Wave Band
A range of semiconductor two-stage parametric amplifiers that integrate a quasi-optical pumping generator have been developed to be used in the input component of communication and navigation systems for the short-wave part of the millimeter band. In the 60 to 65 GHz range, the gain at a -3 dB level is no worse than 15 dB in between 1 and 1.6 GHz. The noise temperature is no higher than 600K when the pumping generator employs a quasi-optical IMPATT oscillator.
O. N.
Sukhoruchko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine
B. M.
Bulgakov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine
Anatoly Ivanovich
Fisun
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
O. I.
Bilous
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
10
An Active Frequency Converter Based on an IMPATT Diode in the Short-Wave Part of the Millimeter Wave Band
Theoretical and experimental studies of an up-converter in the two-millimeter wave band based on Si DDR IMPATT diode have been carried out. The possibility of converting the frequency in the active regime with small losses and linear dependence of the output power on the power of a low-frequency signal is demonstrated.
A. V.
Zorenko
Scientific Research Institute "Orion", Kiev, Ukraine,
A. E.
Koloshinsky
Kiev National Technical University, Kiev, Ukraine
V. E.
Chaika
Scientific Research Institute "Orion ", Kiev, Ukraine
8
A Frequency Multiplier-Converter Based on an Impact Avalanche Transit-Time Diode
The dependence of the output power and conversion coefficient for a multiplier-converter based on a controllable avalanche breakdown of the transit-time microwave diode on the adjustment of the external circuit and operating conditions, has been investigated. The possibility has been shown to multiply the frequency by 20 times with 18-dB loss of the output frequency in the short-wave part of the millimeter wave band.
A. V.
Zorenko
Scientific Research Institute "Orion", Kiev, Ukraine,
A. V.
Bludov
B. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine 47, Lenin Ave., Kharkiv, 61103, Ukraine
T. V.
Kritskaya
Scientific Research Institute "Orion ", Kiev, Ukraine,
V. E.
Chaika
Scientific Research Institute "Orion ", Kiev, Ukraine
8
A Calculation Model for Submicron Field-Effect Transistors Based on GaAs
Model of the field-effect transistor with the Schottky gate is presented in paper. The size of heterogeneities is comparable with the Debye wave-length of carriers and typical frequencies is comparable with dissipation times. The model describes reliably processes in the semiconductor devices and has found practical use.
S. A.
Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. V.
Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
A. A.
Shadrin
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
9
Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode
The operation of a series-connected resonant-tunnel diode and Gunn diode in the resonance circuit is considered. The current-voltage characteristics of diode combination have the peculiarities which lead to a current jump as the voltage increases or decreases at the diodes. The peculiarities of the current-voltage characteristics and current jump are analyzed for the different lengths of the Gunn diodes which determine the current waveform of the diodes in the resonance circuit. It is shown that the oscillation can occurs in the millimeter wave band at the certain ratios of the parameters of resonant-tunnel and Gunn diodes due to the resonance tunneling and intervalley electron transfer. When joint operation of such diodes there are two generation regions: at the sacrifice of the resonance tunneling and intervalley electron transfer. In these regions the generation is possible at multiple frequencies.
E. D.
Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
O. V.
Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
8
Tunnel n+-D- n+ Cathode for Gunn Diode
The operation of n+-D- n+ Gunn diode with a dielectric based on wide-gap Al0.2Ga0.8As semiconductor was examined. The model is suggested allowing the diode oscillation mode to be analyzed. The peculiarities of electron transfer and current instability are scrutinized. The energy characteristics of diode operation in the centimeter range are estimated. The perspectives of diode use are outlined.
O. V.
Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
E. D.
Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
8
Data Transformation at Acoustooptical Interaction
The results of investigation of a process of transformation of RF signals into their acoustic and further into light clones in the form of a diffracted distortion-free laser bundle at acouctooptical interaction are presented.
V. V.
Danilov
Donetsk National University 24 Universitetskaya St., 83055 Donetsk, Ukraine ;Taras Shevchenko National University of Kiev 2, Glushkov Ave., Kiev, 03022, Ukraine
12
An Algorithm for Adaptive Correction of Radar Images
Problems are considered of construction of adaptive algorithms for synthesizing of radar images of underlying surface from signals of coherent airborne radar. Algorithm is proposed pertaining to class of self-adjusting algorithms in which information on trajectory errors is extracted directly from reflected signal. Slant-distance averaged estimate of shift of the Doppler-spectrum on synthesizing interval and higher derivatives of the estimate are used as information parameters. This allows to automatically correct images caused by carrier flight-velocity errors and to take into account errors caused by disregarded acceleration and by rate of change of the acceleration. Results are presented of signals processing of coherent synthetic-aperture radar (SAR). Characteristic properties are considered of operation of proposed algorithm under various conditions.
O. V.
Sytnik
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine
11
General Provisions for the Procedure of Masked Ranging Using Single-Station Passive-Active Means of Air Targets Identification
A passive sensing of radio signal source is proposed as a basic mode of operation for the passive-active radars. The active mode can be further used for measuring the distance to target.
N. M.
Kalyuzhny
Kharkiv Military University
S. N.
Alexandrov
Kharkiv Military University
E. E.
Asanov
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
5
Influence of Low-Intensity EHF Fields on Electrophoretic Mobility of Human Cell Nuclei: Polarization Effects
Experiment was performed the millimeter wave irradiation of the cells of human buccal epithelium. It was found that the irradiation of the cells brings about the charges in the nuclei electroforetic mobility. The right-hand polarized waves are more effective compared to the left-hand and linearyly polarized waves.
N. N.
Grigor'eva
V. Karazin National University of Kharkov, 4, SvobodaSq., Kharkov, 61077, Ukraine
S. P.
Sirenko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine
V. G.
Shakhbazov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
B. M.
Bulgakov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085, Ukraine
Anatoly Ivanovich
Fisun
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
O. I.
Bilous
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
7
The Dielectric Permittivity of Disordered Dispersion Systems with Particles of Different Shapes and Structures
A theoretical study of the dielectric permittivity of dispersion systems has been performed for the cases of various shapes of particles. An approximation has been considered in which it is possible to spread permitting the spread of the theory of the additive contribution of dispersive and dispersion phases to the case of a large volumetric fraction of impurities. The equation describing the dielectric permittivity of particles of a heterogeneous structure has been derived. The developed theoretical aspects and experimental data have been used to determine the dielectric permittivity inside medium of erythrocytes and to estimate the amount of bound and free water inside a cell.
S. V.
Gatash
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
L. D.
Styopin
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
6