Begell House Inc.
Telecommunications and Radio Engineering
TRE
0040-2508
67
3
2008
Determination of Signals with Pseudo-Random Tuning of Operating Frequency by Means of Wideband Systems of Radiomonitoring
191-201
10.1615/TelecomRadEng.v67.i3.10
A. B.
Tokarev
Voronezh State Technical University, Voronezh, Russia
A. V.
Ashikhmin
Voronezh Subsidiary, NPP ZAO IRKOS (Moscow), Voronezh, Russian Federation
V. A.
Kozmin
Voronezh State Technical University, Voronezh, Russia
A Computational relations determining the ability of wideband systems of radiomonitoring to detect frequency positions, which are used in transmitting information by means of signals with pseudo-random tuning of operating frequency, have been obtained.
Selecting the Service Mode with a Minimal Value of the Average Waiting Time for the Beginning of Telecommunication Object Technical Status Monitoring
203-215
10.1615/TelecomRadEng.v67.i3.20
A. M.
Labunets
The Academy of Federal Security Guard Service of the Russian Federation, Orel, Russia
N. A.
Oreshin
The Academy of Federal Security Guard Service of the Russian Federation, Orel, Russia
A. N.
Oreshin
Academy of the Russian Federal Security Service, Orel
R. N.
Shulgin
The Academy of Federal Security Guard Service of the Russian Federation, Orel, Russia
Monitoring the technical status of telecommunication objects is an expensive process requiring a significant time. Quality of this process, implemented by an automated monitoring system, substantially depends on its organization, i.e., the service mode, service discipline (first-in-first-out service or priority service), the number and type of measuring facilities used, and the service type (individual or mass service). In this connection, a very important scientific problem related to selection of such service mode when the value of the average waiting time for the beginning of telecommunication object technical status monitoring is minimized appears.
Three-Frequency Interaction of Electromagnetic Waves in a Periodical Layered Structure
217-226
10.1615/TelecomRadEng.v67.i3.30
Ye. A.
Olkhovskiy
National Technical University "Kharkiv Polytechnic Institute", 21, Frunze Str., Kharkiv 61002, Ukraine
O. V.
Shramkova
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
A. A.
Bulgakov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
The paper considers the three-wave non-linear interaction in an infinite periodic layered dielectric. It is assumed that one of the period-forming layers is characterized by a non-linear polarization. The non-linear dielectric possesses a 42 m-class anisotropy and its optical axis is oriented along the direction of periodicity. The synchronism conditions are analyzed. The anisotropy of the given symmetry class results in that the TE - and TM-polarized waves are coupled. The resonances characteristic of the periodic medium are analyzed. It is shown that the interaction efficiency increases essentially at the points of resonance.
Influence of Constructive and Technological Solutions of Silicon Solar Cells on Minority Carrier Parameters of Base Crystals
227-240
10.1615/TelecomRadEng.v67.i3.40
M. V.
Kirichenko
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv
R. V.
Zaitsev
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv
N. V.
Deyneko
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv, Ukraine
V. R.
Kopach
National Technological University "Kharkiv Polytechnic Institute", 21, Frunze St., 61002 Kharkiv
V. A.
Antonova
State-owned Enterprise "Research Technological Institute for Equipment Development", 40/42, Primakov St., 61010 Kharkiv; Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
A. M.
Listratenko
State-owned Enterprise "Research Technological Institute for Equipment Development", 40/42, Primakov St., 61010 Kharkiv; Kharkiv National University of Radio Engineering and Electronics, 14, Lenin Ave, Kharkiv, 61166, Ukraine
The investigated values of lifetime τ and diffusion length L of minority carriers in base crystals of silicon solar cells (Si-SC) associated with their various structurally solutions are presented. The optimal construction-technological solution version for Ukrainian monocrystalline Si-SC was suggested on the basis of the carried out comparative analysis of received τ and L values.
The Structures for Controlling Charge Carriers in Silicon Photo Cells
241-258
10.1615/TelecomRadEng.v67.i3.50
A. N.
Dovbnya
National Science Center "Kharkov Institute of Physics and Technology ", 1, Academicheskaya sir., Kharkov, 61108, Ukraine
V. P.
Yefimov
National Science Center "Kharkov Institute of Physics and Technology ", 1, Academicheskaya sir., Kharkov, 61108, Ukraine
The structural model of lateral amorphous crystal unifications within a crystal silicon semiconductor is considered. The process of their formation includes various technological operations related to radiation amorphization of the silicon crystal structure with the fragments from the fission of uranium nuclei and hydrogenation of the structure, gamma-transmutation of silicon nuclei into aluminum, recovering of the crystal structure properties outside of the amorphous phase domain and the synthesis of the protecting illuminating coatings from the diamond-like carbon structures with sp2−sp3 electron hybridization.
Pulse Photo multiplier Simulation Based on the pn-i-pn Structure with Avalanche p-n Junction Barriers
259-272
10.1615/TelecomRadEng.v67.i3.60
K. A.
Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
H. A.
Cerdeira
Abdus Salam International Centre of Theoretical Physics, 34100 Trieste, Italy
P. P.
Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy
of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
A pulse amplification is modeled in a pn-i-pn structure-based photomultiplier having an internal avalanche-cascade amplification. The gain factor, the fast-action and the noise of the avalanche multiplication have been computed. The photomultipliers under investigation have proven to have a high gain factor, a low threshold of current sensitivity and a better operational reliability as compared with the avalanche photodiodes.
Traffic Management in Conditions of Distant Access to SCC Resources
273-284
10.1615/TelecomRadEng.v67.i3.70
M. L.
Goldshtein
Institute of Mathematics and Mechanics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia
N. V.
Zakurdaev
Institute of Mathematics and Mechanics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia
D. D.
Kaiky
Institute of Mathematics and Mechanics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia
A. V.
Merkuliev
Institute of Mathematics and Mechanics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia
A technology for managing information streams in conditions of distant access to a supercomputer center of the Institute of Mathematics and Mechanics, of the Ural Branch of the Russian Academy of Sciences, for ensuring "conflict-free" traffic in the hierarchical networking with consultation, diagnosis, and intellectual elements is described.