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Telecommunications and Radio Engineering
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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v63.i9.40
pages 815-826

Spin-Filtering Electron Currents in Semimagnetic Semiconductor Nanostructures

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085
S. A. Borysenko
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine

ABSTRACT

Spin-filtering electron currents have been studied in the nanostructures based on ZnMnSe-semimagnetic semiconductors. It is shown that the thicknesses of nanostructure layers and the Mn-concentrations in the layers can be chosen in such a way that the spin polarization of the electron current can reach very large values in relatively low external constant magnetic fields. It has been found that the degree and sign of the spin polarization of the electron current can be changed with the help of the bias voltage applied to the semimagnetic nanostructure. It has been determined that the sign reversal of the spin polarization of the electron current is concerned with the resonance tunneling of spin-up electrons through the double-barrier energy potential formed in the nanostructure at the expense of choosing the composition of semimagnetic layers.