SCATTERING ELECTRONS ON PLASMA OSCILLATIONS IN THE SEMICONDUCTOR-DIELECTRIC-SEMICONCUCTOR STRUCTURE

N. N. Beletskii; S. I. Khankina; Vladimir M. Yakovenko; I. V. Yakovenko

doi:10.1615/TelecomRadEng.v70.i13.70

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Home > Journals > Telecommunications and Radio Engineering > Volume 70, 2011 Issue 13 > SCATTERING ELECTRONS ON PLASMA OSCILLATIONS IN THE SEMICONDUCTOR-DIELECTRIC-SEMICONCUCTOR STRUCTURE

ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v70.i13.70
pages 1191-1202

SCATTERING ELECTRONS ON PLASMA OSCILLATIONS IN THE SEMICONDUCTOR-DIELECTRIC-SEMICONCUCTOR STRUCTURE

N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

S. I. Khankina
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

Vladimir M. Yakovenko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

I. V. Yakovenko
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

ABSTRACT

The interaction of plasmons with the charged particle passing through the semiconductor-dielectric-semiconductor boundary has been studied taking into consideration the influence of the potential barrier. The probabilities of radiation and absorption of plasmons by the electron are found out. The conditions when processes of the plasmon emission prevail over of absorption are specified.

KEY WORDS: charged particle, plasmon, the potential barrier, radiation (absorption) of oscillations