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Telecommunications and Radio Engineering

ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v70.i9.50
pages 809-818

NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE

E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

ABSTRACT

The diodes having a negative differential conductivity (NDC), due to the tunneling or resonance tunneling of electrons through the lateral diode faces is under consideration. These diodes can be used for frequency generation, amplification and multiplication. The condition for NDC realization, currents and current-voltage characteristics are determined. The problems supposed to be solved in the further investigations of diodes with tunnel- and resonance-tunnel side boundaries are set. The planar and sandwich-type diode structures are offered.

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