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Telecommunications and Radio Engineering
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ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v60.i12.90
7 pages

Interaction of Axial and Cyclotron Electronic Oscillations in M-Type Devices

V. B. Baiburin
Saratov State Technical University, Russia
A. V. Sysuev
Saratov State Technical University, Russia
V. A. Sysuev
Saratov State Technical University, Russia
A. A. Terentiev
Saratov State Technical University, Russia


Based on the solution of the electron motion equations in the crossed electric and magnetic fields typical for magnetron devices (MD), a mechanism for setting up electronic oscillations along the axial direction of the device is considered. The interaction between these oscillations and the cyclotron motion of electrons are also shown. In terms of the phenomenon described above a mechanism is suggested whereby the high-energy electrons are capable of creating the anode current in the MDs, the afore-mentioned electrons lying outside the MD critical mode.

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