Published 12 issues per year
ISSN Print: 0040-2508
ISSN Online: 1943-6009
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The Possibility for Development of Highly Efficient Silicon Solar Cells with Base p-i-n Structure
ABSTRACT
Test samples of the solar cells (SC) based on the p-i-n structure have been manufactured and investigated silicon crystals of i (n−)-type conductivity is very poorly doped by phosphorus. Samples have the thickness of about 300 μm and resistivity of 4000 Ohm cm. The boron p-type layer and phosphorus n-type layer with concentration of ∼1020cm−3 and thickness of 1.5 μm were applied according to technology of commercially produced of Ukrainian monocrystalline Si-SC. Photocurrent density JP, the output and the diode parameters of SC were determined from the loading illuminated current-voltage characteristics measured at 25°C and under the conditions of extra-atmospheric solar radiation (AM0 mode − air mass equal to zero). The measured JP = 48.6 mA/cm2 is economically feasible for Ukrainian monocrystalline Si-SC that stipulates the expediency of serial development of Si-SC with p-i-n structure. The influence of weakly concentrated radiation on the efficiency of such type of SC is investigated. The proposals is justified for improvement of Si-SC design with p-i-n structure ensuring their efficiency increasing up to 20%.