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Telecommunications and Radio Engineering
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ISSN Print: 0040-2508
ISSN Online: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v72.i8.70
pages 731-740

POWER CHARACTERISTICS OF MILLIMETRIC AND SUBMILLIMETRIC OSCILLATORS BASED ON THE ABRUPT p-n-JUNCTTONS

K. A. Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

ABSTRACT

Numerical simulation of power characteristics of microwaves oscillators on the basis of abrupt Ge, Si and GaAs p-n-junctions with the permanent reversed bias is performed. It is shown that excitation of oscillators is conditioned by interdependence of the electric field and avalanche current, which is observed at an avalanche current comparable to the value with of the limit current of p-n-junction. Power, frequency and electronic efficiency of oscillators is explored and comparison is executed with characteristics of IMPATT-diodes. It is shown that power and electronic efficiency of oscillators is substantially higher than at IMPATT-diodes


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